Ian Concannon
Pronouns: he/him/his
Research Mentor(s): Kamruzzaman Khan
Co-Presenter:
Research Mentor School/College/Department: Materials Science and Engineering / Engineering
Presentation Date: April 20
Presentation Type: Poster
Session: Session 1 – 10am – 10:50am
Room: League Ballroom
Authors: Ian Concanno , Kamruzzaman Khan, Elaheh Ahmadi
Presenter: 83
Abstract
In this study, we report variations in the structural structure and emission wavelength of InyGa1-yN/InxGa1-xN quantum well by changing Ga and In beam equivalent flux. Structural characterization was conducted using high-resolution x-ray diffraction (XRD). Rocking curve (RC) w-2tscans of InGaN films reveal whether perfect epitaxial structure was achieved or mosaicity and lattice strains broadened the layer peak. This work demonstrates the optimal conditions for growing InyGa1-yN/InxGa1-xN quantum well films on GaN on sapphire template to best achieve good structural quality and light emission properties. The findings from this study can improve the design and fabrication processes for optoelectronics applications.
Engineering
