Dax Kaplan
Research Mentor: Xin Xie
Mentor Department: Physics, LSA
Author(s): Not Available
Session: Session 3 (11:00 AM – 11:50 AM)
Presentation Type: Poster 71
Abstract
The advent of van der Waals semiconductors has broad implications for material science and condensed matter research. MoSe2 is a transition metal dichalcogenide, a two-dimensional van der Waals semiconductor that exhibits intense light-matter interactions, strong spin-orbit coupling, rich excitonic physics, and a high degree of integrability. The layers of MoSe2 can be exfoliated into atomically thin two-dimensional monolayers which bind to other materials due to the van der Waals force. It is then encapsulated by the large-gap insulating material hexagonal boron nitride (h-BN) to optimize its optical qualities. When two layers of this semiconductor are stacked at a controlled twist angle, creating a twist-induced moiré pattern, it is expected to be able to identify the correlation between its optical properties, magnetic characteristics, and the chosen twist angle. The preparation of high-quality materials is essential for our investigation. Monolayers of both MoSe2 and h-BN were exfoliated onto chips of silicon dioxide using tape and identified as relevant samples by microscope analysis. The samples will be subject to laser spectroscopy to identify their excitonic and optic properties. The findings of this research will benefit both understanding of two-dimensional van der Waals materials, semiconductor technology, fundamental physics, and the development of optoelectronic devices.
